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BUV27 NPN Silicon Power Transistor
This device is designed for use in switching regulators and motor control.
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* Low Collection Emitter Saturation Voltage * Fast Switching Speed * Pb-Free Package is Available*
POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS
MARKING DIAGRAM
MAXIMUM RATINGS
Rating Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation (TC = 25C) Derate above 25C Operating and Storage Temperature - Continuous - Peak (Note 1) Symbol VCEO VCBO VEBO IC ICM IB PD TJ, Tstg Value 120 240 7.0 12 20 4.0 70 0.56 - 65 to 150 Unit Vdc Vdc Vdc Adc Adc W W/C C 1 TO-220AB CASE 221A STYLE 1 2 4
BUV27G AYWW
3
THERMAL CHARACTERISTICS
Rating Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA Max 1.78 62.5 Unit C/W
BUV27 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb-Free Package
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
ORDERING INFORMATION
Device BUV27 BUV27G Package TO-220AB TO-220AB (Pb-Free) Shipping 50 per Rail 50 per Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
1
August, 2005 - Rev. 1
Publication Order Number: BUV27/D
BUV27
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Symbol ICER ICEX IEBO VCEO(sus) VEBO VCE(sat) (Note 2) VBE(sat) (Note 2) Parameter Collector Cut-off Current (RBE = 50 W) Collector Cut-off Current Emitter Cut-off Current (IC = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (IC = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Conditions VCE = 240 V, TC = 125C VCE = 240 V, VBE = -1.5 V, TC = 125C VBE = 5 V IC = 0.2 A, L = 25 mH IE = 50 mA IC = 4 A, IB = 0.4 A IC = 8 A, IB = 0.8 A IC = 8 A, IB = 0.8 A 120 7.0 30 0.7 1.5 2.0 Min Typ Max 3.0 1.0 1.0 Unit mA mA mA V V V V
Resistive Load ton ts tf Turn-on Time Storage Time Fall Time VCC = 90 V, IC = 8 A VBE = -6 V, IB1 = 0.8 A RBB = 3.75 W 0.4 0.5 0.12 0.8 1.2 0.25 ms ms ms
Inductive Load ts tf ts tf Storage Time Fall Time Storage Time Fall Time VCC = 90 V, IC = 8 A IB1 = 0.8 A, VBE = -5 V LB = 1 mH VCC = 90 V, IC = 8 A IB1 = 0.8 A, VBE = -5 V LB = 1 mH, TJ = 125C 0.6 0.04 2.0 0.15 ms
2. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2%
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BUV27
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.05 0.02 ZqJC(t) = r(t) RqJC RqJC = 1.785C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
D = 0.5 0.2
0.07 0.05
0.03 0.02 0.01
t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k
Figure 1. Thermal Response
,C I COLLECTOR CURRENT (AMP)
20 16 10
100 ms 5 ms dc
1.0
0.1
BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25C 5.0 10 50 20 120 150 VCE, COLLECTOR-EMITTER VOLTAGE (V)
0.02 2.0
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure 2. Forward Bias Safe Operating Area
TA PD, POWER DISSIPATION (WATTS) TC
3.0
60
2.0
40
TC
1.0
20
TA
0
0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C)
Figure 3. Power Derating
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BUV27
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
-T- B
4
SEATING PLANE
F T S
C
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BUV27/D

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